CoolSIC™ MOSFET650 V, 22 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of the board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 22 mΩ in TOLL package offering is complemented by the availability of TOLL also forCoolMOS™andCoolGaN™, making it an appealing one stop shop option for various systems. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, makes the 22 mΩ product suitable for high power designs. It ideally fits the emerging Totem Pole PFC topology in high power systems, as well as high power DC-DC or AC-DC stages, with demanding power density targets.