Description
General part information
IRL80HS120
Available in three different voltage classes (60V, 80V and 100V), Infineon’snew logic level power MOSFETsare highly suitable forwireless charging,telecomandadapterapplications. The PQFN 2x2 package is especially suited for high speed switching and form factor critical applications. It enables higher power density and improved efficiency as well as significant space saving.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRL80HS120 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 12.5 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 7 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 6-PowerVDFN |
| Package Length | 2 mm |
| Package Name | DFN2020, 6-PQFN |
| Package Width | 2 mm |
| Power Dissipation (Max) | 11.5 W |
| Rds On (Max) | 32 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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CAD
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