KBU6J-M3/P
ActiveVishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 6A KBU
KBU6J-M3/P
ActiveVishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 6A KBU
Description
General part information
KBU6J-M3/P
BRIDGE RECT 1PHASE 600V 6A KBU
Technical Specifications
Parameters and characteristics for this part
| Specification | KBU6J-M3/P |
|---|---|
| Current - Average Rectified (Io) | 6 A |
| Current - Reverse Leakage | 5 µA |
| Diode Type | Single Phase |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -50 °C |
| Package / Case | 4-SIP, KBU |
| Package Name | KBU |
| Technology | Standard |
| Voltage - Forward (Vf) (Max) | 980 mV |
| Voltage - Peak Reverse (Max) | 600 V |
Pricing
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CAD
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Documents
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