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Description

General part information

TSM60NE285CIT C0G

MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationTSM60NE285CIT C0G
Current - Continuous Drain (Id) (Tc)9.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On)10 V
Drive Voltage (Min Rds On)12 V
FET TypeN-Channel
Gate Charge (Max)22 nC
Input Capacitance (Ciss) (Max)894 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameITO-220TL
Power Dissipation (Max)56 W
Rds On (Max)274 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)6 V

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CAD

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