Description
General part information
IGLR60R190D1XUMA1
This product is not recommended for new designs. Please explore its successorIGLR65R140D2 The IGLR60R190D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the leadless TSON-8 (ThinPAK 5x6) package with a height of 1 mm only, it is perfect for achieving highest power density in low-power switched mode power supplies, such as USB-Cadapters and chargers.
Technical Specifications
Parameters and characteristics for this part
| Specification | IGLR60R190D1XUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 12.8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 157 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TSON-8-6 |
| Power Dissipation (Max) | 55.5 W |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | -10 V |
| Vgs(th) (Max) | 1.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources