Specification	SCT2H12NYTB

Current - Continuous Drain (Id) (Tc)	4 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	14 nC
Input Capacitance (Ciss) (Max)	184 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Package Name	TO-268
Power Dissipation (Max)	44 W
Rds On (Max)	1.5 Ohm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-6 V
Vgs (Max) Positive	22 V
Vgs(th) (Max)	4 V

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