Specification	SI8410DB-T2-E1

Current - Continuous Drain (Id) (Ta)	3.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	16 nC
Input Capacitance (Ciss) (Max)	620 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	4-UFBGA
Package Length	1 mm
Package Name	4-Micro Foot
Package Width	1 mm
Power Dissipation (Max)	780 mW, 1.8 W
Rds On (Max)	37 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	850 mV

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