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XP3N9R5AMT

XP3N9R5AMT

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YAGEO

MOSFET N-CH 30V 18A 38.7A PMPAK

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XP3N9R5AMT

XP3N9R5AMT

Active
YAGEO

MOSFET N-CH 30V 18A 38.7A PMPAK

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Description

General part information

XP3N9R5AMT

N-Channel 30 V 18A (Ta), 38.7A (Tc) 5W (Ta), 22.7W (Tc) Surface Mount PMPAK® 5 x 6

Technical Specifications

Parameters and characteristics for this part

SpecificationXP3N9R5AMT
Current - Continuous Drain (Id) (Ta)18 A
Current - Continuous Drain (Id) (Tc)38.7 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)28.8 nC
Input Capacitance (Ciss) (Max)1280 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerLDFN
Package Length5 mm
Package Name8-PMPAK, PMPAK®
Package Width6 mm
Power Dissipation (Max)5 W, 22.7 W
Rds On (Max)9.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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Documents

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