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Description

General part information

MCU62N10YHE3-TP

POWER MOSFET

Technical Specifications

Parameters and characteristics for this part

SpecificationMCU62N10YHE3-TP
Current - Continuous Drain (Id) (Tc)62 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)27.6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)1379 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252 (DPAK)
Power Dissipation (Max)94 W
QualificationAEC-Q101
Rds On (Max)11 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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