APT106N60B2C6

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Microchip Technology

TRANS MOSFET N-CH 600V 106A 3-PIN(3+TAB) T-MAX TUBE

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Microchip Technology

TRANS MOSFET N-CH 600V 106A 3-PIN(3+TAB) T-MAX TUBE

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	APT106N60B2C6	APT106 Series

Drain to Source Voltage (Vdss)	600 V	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V	10 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	308 nC	308 nC
Input Capacitance (Ciss) (Max) @ Vds	8390 pF	8390 pF
Mounting Type	Through Hole	Through Hole
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-247-3 Variant	TO-247-3 Variant, TO-264AA, TO-264-3
Power Dissipation (Max)	833 W	833 W
Rds On (Max) @ Id, Vgs [Max]	35 mOhm	35 mOhm
Supplier Device Package	T-MAX™ [B2]	T-MAX™ [B2], TO-264 (L)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	3.5 V	3.5 V

600V Superjunction MOSFET

Part	Package / Case	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)
Microchip Technology APT106N60B2C6	TO-247-3 Variant	3.5 V	600 V	35 mOhm	8390 pF	N-Channel	T-MAX™ [B2]	20 V	833 W	Through Hole	308 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V
Microchip Technology APT106N60LC6	TO-264-3, TO-264AA	3.5 V	600 V	35 mOhm	8390 pF	N-Channel	TO-264 (L)	20 V	833 W	Through Hole	308 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

A family of 600V Superjunction MOSFETs available in a variety of current and package options.

Technical documentation and resources