RJM0603JSC-00#12
ObsoleteRenesas Electronics Corporation
MOSFET 3N/3P-CH 60V 20A 20HSOP
RJM0603JSC-00#12
ObsoleteRenesas Electronics Corporation
MOSFET 3N/3P-CH 60V 20A 20HSOP
Description
General part information
RJM0603JSC-00#12
MOSFET 3N/3P-CH 60V 20A 20HSOP
Technical Specifications
Parameters and characteristics for this part
| Specification | RJM0603JSC-00#12 |
|---|---|
| Channel Count | 3 |
| Configuration | 3 P-Channel (3-Phase Bridge), 3 N, 3 N and 3 P-Channel |
| Configuration - Features | 3-Phase Bridge |
| Current - Continuous Drain (Id) | 20 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| FET Feature Drive Voltage | 4.5 V |
| Gate Charge (Max) | 43 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 2600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package Features | Exposed Pad |
| Package Length | 0.433 in |
| Package Name | 20-HSOP, 20-SOIC |
| Package Width | 11 mm |
| Power - Max | 54 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 20 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
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