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DMWSH120H43SM4Q

DMWSH120H43SM4Q

Active
Diodes Inc

SICFET N-CH 1200V TO-247

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DMWSH120H43SM4Q

DMWSH120H43SM4Q

Active
Diodes Inc

SICFET N-CH 1200V TO-247

Find alt

Description

General part information

DMWSH120H43SM4Q

SICFET N-CH 1200V TO-247

Technical Specifications

Parameters and characteristics for this part

SpecificationDMWSH120H43SM4Q
Current - Continuous Drain (Id) (Tc)70.5 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)114 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2204 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NameTO-247-4
Power Dissipation (Max)320 W
QualificationAEC-Q101
Rds On (Max)43 mOhm
TechnologySiCFET (Silicon Carbide)
Vgs (Max) Negative-8 V
Vgs (Max) Positive19 V
Vgs(th) (Max)3.6 V

Pricing

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CAD

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Documents

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