Specification	TPM7R10CQ5,LQ

Current - Continuous Drain (Id) (Ta)	13 A
Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	8 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	57 nC, 57 nC
Input Capacitance (Ciss) (Max)	6800 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerTDFN
Package Length	4.9 mm
Package Name	8-SOP Advance
Package Width	5.75 mm
Power Dissipation (Max)	250 W, 3 W
Rds On (Max)	7.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

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