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GT2K0P20T

GT2K0P20T

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Goford Semiconductor

MOSFET P-CH -200V 19A TO-220-3

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GT2K0P20T

GT2K0P20T

Active
Goford Semiconductor

MOSFET P-CH -200V 19A TO-220-3

Find alt

Description

General part information

GT2K0P20T

MOSFET P-CH -200V 19A TO-220-3

Technical Specifications

Parameters and characteristics for this part

SpecificationGT2K0P20T
Current - Continuous Drain (Id) (Tc)19 A
Drain to Source Voltage (Vdss)200 V, -200 V
Drive Voltage (Max Rds On)4.5 V, 10 V
Drive Voltage (Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Max)70 nC, 26 nC
Input Capacitance (Ciss) (Max)1170 pF, 3400 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220
Power Dissipation (Max)138 W, 138 W
Rds On (Max)90 mOhm, 200 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3 V

Pricing

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CAD

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