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STI23NM60N

STI23NM60N

Obsolete
STMicroelectronics

MOSFET N-CH 600V 19A I2PAK

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STI23NM60N

STI23NM60N

Obsolete
STMicroelectronics

MOSFET N-CH 600V 19A I2PAK

Find alt

Description

General part information

STI23NM60N

MOSFET N-CH 600V 19A I2PAK

Technical Specifications

Parameters and characteristics for this part

SpecificationSTI23NM60N
Current - Continuous Drain (Id) (Tc)19 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)60 nC
Input Capacitance (Ciss) (Max)2050 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameI2PAK
Power Dissipation (Max)150 W
Rds On (Max)180 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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