TRS12V65H,LQ
ActiveToshiba Semiconductor and Storage
DIODE SCHOTTKY SIC 650V 30A 4-PIN DFN EP T/R
TRS12V65H,LQ
ActiveToshiba Semiconductor and Storage
DIODE SCHOTTKY SIC 650V 30A 4-PIN DFN EP T/R
Description
General part information
TRS12V65H,LQ
DIODE SCHOTTKY SIC 650V 30A 4-PIN DFN EP T/R
Technical Specifications
Parameters and characteristics for this part
| Specification | TRS12V65H,LQ |
|---|---|
| Capacitance | 778 pF |
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage | 120 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | 4-VSFN Exposed Pad |
| Package Length | 8 mm |
| Package Name | 4-DFN-EP |
| Package Width | 8 mm |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.35 V |
Pricing
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CAD
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Documents
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