Description
General part information
GHXS050B170S-D3
1700V, 50A SIC DUAL DIODE MODULE
Technical Specifications
Parameters and characteristics for this part
| Specification | GHXS050B170S-D3 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 110 A |
| Current - Reverse Leakage | 200 µA |
| Diode Configuration | Independent |
| Diode Count | 2 |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Package Name | SOT-227 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1700 V |
| Voltage - Forward (Vf) (Max) | 1.65 V |
Pricing
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CAD
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