
E4D20120G
ObsoleteWolfspeed, Inc.
DIODE SIL CARB 1200V 56A TO2632

E4D20120G
ObsoleteWolfspeed, Inc.
DIODE SIL CARB 1200V 56A TO2632
Description
General part information
E4D20120G
DIODE SIL CARB 1200V 56A TO2632
Technical Specifications
Parameters and characteristics for this part
| Specification | E4D20120G |
|---|---|
| Capacitance | 1474 pF |
| Current - Average Rectified (Io) | 56 A |
| Current - Reverse Leakage | 200 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
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CAD
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Documents
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