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IS46QR16256B-083RBLA2

IS46QR16256B-083RBLA2

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ISSI, Integrated Silicon Solution Inc

DRAM CHIP DDR4 SDRAM 4GBIT 256M X 16 1.2V 96-PIN TWBGA

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IS46QR16256B-083RBLA2

IS46QR16256B-083RBLA2

Active
ISSI, Integrated Silicon Solution Inc

DRAM CHIP DDR4 SDRAM 4GBIT 256M X 16 1.2V 96-PIN TWBGA

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Description

General part information

IS46QR16256B-083RBLA2

DRAM CHIP DDR4 SDRAM 4GBIT 256M X 16 1.2V 96-PIN TWBGA

Technical Specifications

Parameters and characteristics for this part

SpecificationIS46QR16256B-083RBLA2
Access Time19 ns
Clock Frequency1.2 GHz
GradeAutomotive
Memory Depth256 M
Memory FormatDRAM
Memory Interface (Type)POD
Memory Size4 Gbit
Memory TypeVolatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)105 °C
Operating Temperature (Min)-40 °C
Package / Case96-TFBGA
Package Length9 mm
Package Name96-TWBGA
Package Width13 mm
QualificationAEC-Q100
TechnologySDRAM - DDR4
Voltage - Supply (Maximum)1.26 V
Voltage - Supply (Minimum)1.14 V
Write Cycle Time - Page15 ns
Write Cycle Time - Word15 ns

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