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Description

General part information

AOWF10N65

MOSFET N-CH 650V 10A TO262F

Technical Specifications

Parameters and characteristics for this part

SpecificationAOWF10N65
Current - Continuous Drain (Id) (Tc)10 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)33 nC
Input Capacitance (Ciss) (Max)1645 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameTO-262F
Power Dissipation (Max)25 W
Rds On (Max)1 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4.5 V

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