Description
General part information
IPB64N25S320ATMA1
IPB64N25S320ATMA1 is a OptiMOS®-T power-transistor. Potential application includes hybrid inverter, DC/DC, piezo injection.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB64N25S320ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 64 A |
| Drain to Source Voltage (Vdss) | 250 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 89 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 7000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3-2 |
| Power Dissipation (Max) | 300 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 20 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources