Description
General part information
BGA8V1BN6E6327XTSA1
The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to 3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2mA. In bypass mode the LNA provides an insertion loss of 5.3 dB.The BGA8V1BN6 is based upon Infineon Technologies B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).
Technical Specifications
Parameters and characteristics for this part
| Specification | BGA8V1BN6E6327XTSA1 |
|---|---|
| Current - Supply | 4.2 mA |
| Frequency (Max) | 3.8 GHz |
| Frequency (Min) | 3.4 GHz |
| Mounting Type | Surface Mount |
| Noise Figure (Max) | 5.3 dB |
| Noise Figure (Min) | 1.2 dB |
| P1dB | -3 dBm |
| Package / Case | 6-XFDFN |
| Package Name | PG-TSNP-6-2 |
| Test Frequency (Maximum) | 3.8 GHz |
| Test Frequency (Minimum) | 3.4 GHz |
| Voltage - Supply (Maximum) | 3.1 V |
| Voltage - Supply (Minimum) | 1.6 V |
Pricing
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CAD
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