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Description

General part information

GSFU9006

MOSFET, N-CH, SINGLE, 6A, 900V,7

Technical Specifications

Parameters and characteristics for this part

SpecificationGSFU9006
Current - Continuous Drain (Id) (Tj)6 A
Drain to Source Voltage (Vdss)900 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)18.4 nC
Input Capacitance (Ciss) (Max)1250 pF, 1250 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220F
Power Dissipation (Max)32 W
Rds On (Max)750 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)3.9 V

Pricing

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CAD

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Documents

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