MSRTA300120D
ActiveGeneSiC Semiconductor
DIODE MODULE GEN PURP 1200V 300A
MSRTA300120D
ActiveGeneSiC Semiconductor
DIODE MODULE GEN PURP 1200V 300A
Description
General part information
MSRTA300120D
DIODE MODULE GEN PURP 1200V 300A
Technical Specifications
Parameters and characteristics for this part
| Specification | MSRTA300120D |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 300 A |
| Current - Reverse Leakage | 20 µA |
| Diode Configuration | Series Connection |
| Diode Pair Count | 1 pair |
| Mounting Type | Chassis Mount |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | Module |
| Speed | Standard Recovery |
| Speed - Fast Recovery (Minimum) | 200 mA, 500 ns |
| Speed - Recovery Current | 200 mA, 200 mA |
| Speed - Recovery Time | 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.1 V |
Pricing
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CAD
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Documents
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