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G3F34MT12K

G3F34MT12K

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GeneSiC Semiconductor

1200V 34M TO-247-4 G3F SIC MOSFE

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G3F34MT12K

G3F34MT12K

Active
GeneSiC Semiconductor

1200V 34M TO-247-4 G3F SIC MOSFE

Find alt

Description

General part information

G3F34MT12K

1200V 34M TO-247-4 G3F SIC MOSFE

Technical Specifications

Parameters and characteristics for this part

SpecificationG3F34MT12K
Current - Continuous Drain (Id) (Tc)63 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Max)104 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2418 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-4
Package NameTO-247-4
Power Dissipation (Max)263 W
QualificationAEC-Q101
Rds On (Max)45 mOhm
TechnologySiC (Silicon Carbide Junction Transistor)
Vgs (Max) Negative-10 V
Vgs (Max) Positive22 V
Vgs(th) (Max)4.3 V

Pricing

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CAD

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Documents

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