
TPAR3G
ObsoleteTaiwan Semiconductor Corporation
DIODE AVALANCHE 400V 3A TO277A

TPAR3G
ObsoleteTaiwan Semiconductor Corporation
DIODE AVALANCHE 400V 3A TO277A
Description
General part information
TPAR3G
DIODE AVALANCHE 400V 3A TO277A
Technical Specifications
Parameters and characteristics for this part
| Specification | TPAR3G |
|---|---|
| Capacitance | 58 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage | 10 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Package Name | TO-277A (SMPC) |
| Reverse Recovery Time (trr) | 120 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 400 V |
| Voltage - Forward (Vf) (Max) | 1.55 V |
Pricing
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CAD
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