Description
General part information
IDFW60C65D1XKSA1
Rapid 1switching 650 V, 60 A emitter controlledsilicon power diodein a TO-247advanced isolationpackage for a best cost efficient solution.
Technical Specifications
Parameters and characteristics for this part
| Specification | IDFW60C65D1XKSA1 |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 56 A |
| Current - Reverse Leakage | 40 µA |
| Diode Configuration | Common Cathode |
| Diode Pair Count | 1 pair |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | PG-TO247-3-AI |
| Reverse Recovery Time (trr) | 112 ns |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.75 V |
Pricing
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CAD
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