SI7461DP-T1-E3
ActiveVishay Dale
POWER MOSFET, P CHANNEL, 60 V, 12.6 A, 0.19 OHM, SOIC, SURFACE MOUNT
SI7461DP-T1-E3
ActiveVishay Dale
POWER MOSFET, P CHANNEL, 60 V, 12.6 A, 0.19 OHM, SOIC, SURFACE MOUNT
Description
General part information
SI7461DP-T1-E3
The SI7461DP-T1-E3 is a 60VDS TrenchFET® P-channel enhancement-mode Power MOSFET with antiparallel diode.
Technical Specifications
Parameters and characteristics for this part
| Specification | SI7461DP-T1-E3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 8.6 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 190 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® SO-8 |
| Package Name | PowerPAK® SO-8 |
| Power Dissipation (Max) | 1.9 W |
| Rds On (Max) | 14.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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