Description
General part information
IGC019S06S1XTMA1
The IGB019S06S1 is a 60 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its very low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IGC019S06S1XTMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 27 A |
| Current - Continuous Drain (Id) (Tc) | 99 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 17 nC, 13 nC |
| Input Capacitance (Ciss) (Max) | 1700 pF, 1450 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | 6-PowerTDFN |
| Package Name | PG-TSON-6-2 |
| Power Dissipation (Max) | 45 W, 3.3 W |
| Rds On (Max) | 1.9 mOhm |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 6.5 V |
| Vgs(th) (Max) | 2.9 V |
Pricing
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