ERC652M4300FHEB500
ActiveVishay General Semiconductor - Diodes Division
RES 2.43M OHM 1% 1/2W AXIAL
Deep-Dive with AI
Search across all available documentation for this part.
ERC652M4300FHEB500
ActiveVishay General Semiconductor - Diodes Division
RES 2.43M OHM 1% 1/2W AXIAL
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | ERC652M4300FHEB500 |
|---|---|
| Composition | Metal Film |
| Features | Moisture Resistant |
| Number of Terminations | 2 |
| Operating Temperature [Max] | 347 °F |
| Operating Temperature [Min] | -65 ░C |
| Package / Case | Axial |
| Power (Watts) | 0.5 W |
| Power (Watts) | 0.5 W |
| Resistance | 2.43 MOhms |
| Size / Dimension [diameter] | 0.18 " |
| Size / Dimension [diameter] | 4.57 mm |
| Size / Dimension [x] | 0.562 in |
| Size / Dimension [x] | 14.27 mm |
| Supplier Device Package | Axial |
| Temperature Coefficient | 50 ppm/°C |
| Tolerance | 1 % |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 1000 | $ 5.45 | |
Description
General part information
ERC652M4300FHEB500
2.43 MOhms ±1% 0.5W, 1/2W Through Hole Resistor Axial Moisture Resistant Metal Film
Documents
Technical documentation and resources
No documents available