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ISL9N302AS3

RF1S23N06LE

Active
ON Semiconductor

23A, 60V, 0.065OHM, N-CHANNEL,

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ISL9N302AS3

RF1S23N06LE

Active
ON Semiconductor

23A, 60V, 0.065OHM, N-CHANNEL,

Find alt

Description

General part information

RF1S23N06LE

N-Channel 60 V 23A (Tc) 75W (Tc) Through Hole I2PAK (TO-262)

Technical Specifications

Parameters and characteristics for this part

SpecificationRF1S23N06LE
Current - Continuous Drain (Id) (Tc)23 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)48 nC, 48 nC
Input Capacitance (Ciss) (Max)850 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameI2PAK (TO-262)
Power Dissipation (Max)75 W
Rds On (Max)65 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max)2 V

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