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VISHAY SIHB15N60E-GE3

SIHB15N60E-GE3

Active
Vishay Dale

POWER MOSFET, N CHANNEL, 600 V, 15 A, 0.23 OHM, TO-263 (D2PAK), SURFACE MOUNT

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VISHAY SIHB15N60E-GE3

SIHB15N60E-GE3

Active
Vishay Dale

POWER MOSFET, N CHANNEL, 600 V, 15 A, 0.23 OHM, TO-263 (D2PAK), SURFACE MOUNT

Find alt

Description

General part information

SIHB15N60E-GE3

POWER MOSFET, N CHANNEL, 600 V, 15 A, 0.23 OHM, TO-263 (D2PAK), SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationSIHB15N60E-GE3
Current - Continuous Drain (Id) (Tc)15 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)78 nC
Input Capacitance (Ciss) (Max)1350 pF, 1350 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263 (D2PAK)
Power Dissipation (Max)180 W
Rds On (Max)280 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

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