SB180E-G
ActiveComchip Technology
DIODE SCHOTTKY 80V 1A DO41
SB180E-G
ActiveComchip Technology
DIODE SCHOTTKY 80V 1A DO41
Description
General part information
SB180E-G
DIODE SCHOTTKY 80V 1A DO41
Technical Specifications
Parameters and characteristics for this part
| Specification | SB180E-G |
|---|---|
| Capacitance | 110 pF |
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage | 500 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 150 °C |
| Operating Temperature - Junction (Min) | -60 °C |
| Package / Case | Axial, DO-204AL, DO-41 |
| Package Name | DO-41 |
| Speed - Fast Recovery (Maximum) | 500 ns |
| Speed - Fast Recovery (Minimum) | 200 mA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) | 850 mV |
Pricing
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