DMN2451UFB4Q-7B
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
DMN2451UFB4Q-7B
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2451UFB4Q-7B |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 32 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) | 660 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 400 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.26 | |
| 10 | $ 0.18 | |||
| 100 | $ 0.09 | |||
| 500 | $ 0.07 | |||
| 1000 | $ 0.05 | |||
| 2000 | $ 0.04 | |||
| 5000 | $ 0.04 | |||
| Digi-Reel® | 1 | $ 0.26 | ||
| 10 | $ 0.18 | |||
| 100 | $ 0.09 | |||
| 500 | $ 0.07 | |||
| 1000 | $ 0.05 | |||
| 2000 | $ 0.04 | |||
| 5000 | $ 0.04 | |||
| Tape & Reel (TR) | 10000 | $ 0.03 | ||
| 30000 | $ 0.03 | |||
| 50000 | $ 0.03 | |||
| 100000 | $ 0.03 | |||
| 250000 | $ 0.03 | |||
Description
General part information
DMN2451UFB4Q Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources