IRFIZ34NPBF

Obsolete

Infineon Technologies

MOSFET N-CH 55V 21A TO220AB FP

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Obsolete

Infineon Technologies

MOSFET N-CH 55V 21A TO220AB FP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFIZ34NPBF

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Input Capacitance (Ciss) (Max) @ Vds	700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	37 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	TO-220AB Full-Pak
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case
Infineon Technologies IRFIZ34NPBF	4 V	37 W	34 nC	55 V	Through Hole	21 A	10 V	MOSFET (Metal Oxide)	-55 °C	175 ░C	700 pF	N-Channel	20 V	TO-220AB Full-Pak	40 mOhm	TO-220-3 Full Pack

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$