DGTD65T40S1PT

Active

Diodes Inc

INSULATED GATE BIPOLAR TRANSISTOR,

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Package PDF +2

DGTD65T40S1PT

Active

Diodes Inc

INSULATED GATE BIPOLAR TRANSISTOR,

Deep-Dive with AI

DocumentsDatasheet Package PDF +2

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DGTD65T40S1PT

Current - Collector (Ic) (Max) [Max]	80 A
Gate Charge	219 nC
IGBT Type	Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	341 W
Reverse Recovery Time (trr)	145 ns
Supplier Device Package	TO-247
Switching Energy	1.15 mJ, 350 µJ
Td (on/off) @ 25°C	58 ns
Td (on/off) @ 25°C	245 ns
Test Condition	15 V, 40 A, 400 V, 7.9 Ohm
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max)	650 V

DGTD65T15H2TF Series

650V FIELD STOP IGBT IN TO247

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Switching Energy	Power - Max [Max]	Reverse Recovery Time (trr)	Gate Charge	Mounting Type	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)
Diodes Inc DGTD65T40S1PT	-40 C	175 °C	TO-247-3	80 A	7.9 Ohm 15 V 40 A 400 V	2.4 V	650 V	TO-247	1.15 mJ 350 µJ	341 W	145 ns	219 nC	Through Hole	Field Stop	58 ns	245 ns
Diodes Inc DGTD65T50S1PT	-40 C	175 °C	TO-247-3	100 A	7.9 Ohm 15 V 50 A 400 V	2.4 V	650 V	TO-247	550 µJ 770 µJ	375 W	80 ns	287 nC	Through Hole	Field Stop	58 ns 328 ns		200 A
Diodes Inc DGTD65T40S2PT	-40 C	175 °C	TO-247-3	80 A	10 Ohm 15 V 40 A 400 V	2.3 V	650 V	TO-247	400 µJ 500 µJ	230 W	60 ns	60 nC	Through Hole	Field Stop	6 ns 55 ns		120 A
Diodes Inc DGTD65T15H2TF	-40 C	175 °C	TO-220-3 Full Pack Isolated Tab	30 A	10 Ohm 15 A 15 V 400 V	2 V	650 V	ITO-220AB	86 µJ 270 µJ		150 ns	61 nC	Through Hole	Field Stop	19 ns 128 ns		60 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DGTD65T15H2TF Series

The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.

DGTD65T40S1PT

Deep-Dive with AI

DGTD65T40S1PT

Deep-Dive with AI

Technical Specifications

DGTD65T15H2TF Series

Pricing

Description

DGTD65T15H2TF Series

Documents

Datasheet

Package PDF

Recommended Soldering Techniques

Datasheet

DGTD65T15H2TF Series