BYM300B170DN2HOSA1

Obsolete

Infineon Technologies

IGBT MOD 650V 40A 20MW

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IGBT MOD 650V 40A 20MW

Technical Specifications

Parameters and characteristics for this part

Specification	BYM300B170DN2HOSA1

Configuration	2 Independent
Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Cutoff (Max) [Max]	40 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	2.8 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	20 mW
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	1.55 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Configuration	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	NTC Thermistor	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Input	Mounting Type	Input Capacitance (Cies) @ Vce	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature
Infineon Technologies BYM300B170DN2HOSA1	20 mW	150 °C	-40 °C	40 A	2 Independent	650 V	Module		1.55 V	Module	40 µA	Standard	Chassis Mount	2.8 nF	Trench Field Stop
Infineon Technologies BYM300A120DN2HOSA1	1000 W			450 A	Single		Module			Module		Standard	Chassis Mount			1200 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Trench Field Stop 2 Independent 650 V 40 A 20 mW Chassis Mount Module

Technical documentation and resources

No documents available