STS26N3LLH6

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STMicroelectronics

MOSFET N-CH 30V 26A 8SO

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STMicroelectronics

MOSFET N-CH 30V 26A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	STS26N3LLH6

Current - Continuous Drain (Id) @ 25°C	26 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	4040 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

MOSFET N-CH 30V 26A 8SO

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]
STMicroelectronics STS26N3LLH6	30 V	1 V	Surface Mount	40 nC	20 V	2.7 W	MOSFET (Metal Oxide)	26 A	4040 pF	8-SOIC	-55 °C	150 °C	4.4 mOhm	N-Channel	4.5 V, 10 V	8-SOIC	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 26A (Tc) 2.7W (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available