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IRFHM3911TRPBF - INFINEON IRFHM3911TRPBF

IRFHM3911TRPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 115 MOHM;

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IRFHM3911TRPBF - INFINEON IRFHM3911TRPBF

IRFHM3911TRPBF

Active
Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 3.3 X 3.3 PACKAGE; 115 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFHM3911TRPBF
Current - Continuous Drain (Id) @ 25°C20 A, 3.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]26 nC
Input Capacitance (Ciss) (Max) @ Vds760 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)29 W, 2.8 W
Rds On (Max) @ Id, Vgs115 mOhm
Supplier Device Package8-PQFN (3x3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.19
10$ 0.75
100$ 0.49
500$ 0.38
1000$ 0.35
2000$ 0.32
Digi-Reel® 1$ 1.19
10$ 0.75
100$ 0.49
500$ 0.38
1000$ 0.35
2000$ 0.32
Tape & Reel (TR) 4000$ 0.26
NewarkEach (Supplied on Cut Tape) 1$ 1.14
10$ 0.69
25$ 0.63
50$ 0.56
100$ 0.50
250$ 0.47
500$ 0.43
1000$ 0.39

Description

General part information

IRFHM3911 Series

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Documents

Technical documentation and resources