Specification	FQI7N10LTU

Current - Continuous Drain (Id) (Tc)	7.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	6 nC
Input Capacitance (Ciss) (Max)	290 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	TO-262 (I2PAK)
Power Dissipation (Max)	40 W, 3.75 W
Rds On (Max)	350 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

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