Description
General part information
IQFH47N04NM6ATMA1
This 40 V normal-level power MOSFET comes in our latest innovative, compact clip-based PQFN 8x6 mm2package enabling very high currents and power levels. The part offers current ultra-low RDS(on)of 0.47 mΩ combined with outstanding thermal performance. This enables higher system efficiency and power density for a large variety of end applications like battery-powered applications, battery management, low-voltage drives and SMPS.
Technical Specifications
Parameters and characteristics for this part
| Specification | IQFH47N04NM6ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 58 A |
| Current - Continuous Drain (Id) (Tc) | 507 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 221 nC |
| Input Capacitance (Ciss) (Max) | 13300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 12-PowerTDFN |
| Package Name | PG-TSON-12-1 |
| Power Dissipation (Max) | 250 W, 3 W |
| Rds On (Max) | 0.47 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
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CAD
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