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Description

General part information

G66

P-16V,-5.8A,RD(MAX)<45M@-4.5V,VT

Technical Specifications

Parameters and characteristics for this part

SpecificationG66
Current - Continuous Drain (Id) (Tc)5.8 A
Drain to Source Voltage (Vdss)16 V
Drive Voltage (Max Rds On)2.5 V
Drive Voltage (Min Rds On)4.5 V
FET TypeP-Channel
Gate Charge (Max)7.8 nC
Input Capacitance (Ciss) (Max)740 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case6-WDFN Exposed Pad
Package Length2 mm
Package Name6-DFN
Package Width2 mm
Power Dissipation (Max)1.7 W
Rds On (Max)45 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V, 8 V
Vgs(th) (Max)1 V

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