Description
General part information
IPI60R299CPXKSA1
TRANS MOSFET N-CH 650V 11A 3-PIN(3+TAB) TO-262 TUBE
Technical Specifications
Parameters and characteristics for this part
| Specification | IPI60R299CPXKSA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 11 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 29 nC |
| Input Capacitance (Ciss) (Max) | 1100 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | PG-TO262-3 |
| Power Dissipation (Max) | 96 W |
| Rds On (Max) | 299 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available