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1N4007C.B.O.

1N4007C.B.O.

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EIC Semiconductor

DIODE STANDARD 1000V 1A DO41

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1N4007C.B.O.

1N4007C.B.O.

Active
EIC Semiconductor

DIODE STANDARD 1000V 1A DO41

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Description

General part information

1N4007C.B.O.

DIODE STANDARD 1000V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification1N4007C.B.O.
Capacitance15 pF
Current - Average Rectified (Io)1 A
Current - Reverse Leakage5 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseAxial, DO-204AL, DO-41
Package NameDO-41
Reverse Recovery Time (trr)2 µs
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1 kV
Voltage - Forward (Vf) (Max)1.1 V

Pricing

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