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G230P06M

G230P06M

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Goford Semiconductor

MOSFET P-CH 60V 48A 105W TO-263

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G230P06M

G230P06M

Active
Goford Semiconductor

MOSFET P-CH 60V 48A 105W TO-263

Find alt

Description

General part information

G230P06M

MOSFET P-CH 60V 48A 105W TO-263

Technical Specifications

Parameters and characteristics for this part

SpecificationG230P06M
Current - Continuous Drain (Id) (Tc)48 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)62 nC
Input Capacitance (Ciss) (Max)4505 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameTO-263
Power Dissipation (Max)105 W
Rds On (Max)20 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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