Zenode.ai Logo
Infineon Technologies AG-IKWH20N65WR6XKSA1 IGBT Chip IGBT Discrete Chip

IKWH30N65WR6XKSA1

LTB
INFINEON

THE IKWH30N65WR6 IS A HIGH SPEED 650 V, 30 A IGBT WITH ANTI-PARALLEL DIODE IN TO-247-3-HCC PACKAGE

Find alt
Infineon Technologies AG-IKWH20N65WR6XKSA1 IGBT Chip IGBT Discrete Chip

IKWH30N65WR6XKSA1

LTB
INFINEON

THE IKWH30N65WR6 IS A HIGH SPEED 650 V, 30 A IGBT WITH ANTI-PARALLEL DIODE IN TO-247-3-HCC PACKAGE

Find alt

Description

General part information

IKWH30N65WR6XKSA1

High speed 650 V, 30 A reverse conductingTRENCHSTOP™ 5 WR6IGBT in high creepage and clearance TO-247-3-HCC package. It is specifically optimized for PFC for RAC / CAC and Welding inverter application. Excellent price/performance ratio of WR6 IGBT allows access to the high performance technology also for cost sensitive customers. WR6 is offering lowest VCEsat, and Eswwhich allows the switching frequency up to 75 kHz. WR6 IGBT also enable more reliable design with the increased clearances and creepage distances.

Technical Specifications

Parameters and characteristics for this part

SpecificationIKWH30N65WR6XKSA1
Current - Collector (Ic) (Max)67 A
Current - Collector Pulsed (Icm)90 A
Gate Charge97 nC
IGBT TypeTrench Field Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseTO-247-3
Package NamePG-TO247-3-32
Power - Max136 W
Vce(on) (Max)1.75 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

No documents available