IRF820
ActiveON Semiconductor
2.5A, 500V, 3.000 OHM, N-CHANNEL
IRF820
ActiveON Semiconductor
2.5A, 500V, 3.000 OHM, N-CHANNEL
Description
General part information
IRF820
N-Channel 500 V 4A (Tc) 80W (Tc) Through Hole TO-220AB
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF820 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 17 nC |
| Input Capacitance (Ciss) (Max) | 315 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220AB |
| Power Dissipation (Max) | 80 W |
| Rds On (Max) | 3 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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