1N3064
ObsoleteMicrosemi Corporation
DIODE GEN PURP 50V 75MA DO35
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1N3064
ObsoleteMicrosemi Corporation
DIODE GEN PURP 50V 75MA DO35
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N3064 |
|---|---|
| Current - Average Rectified (Io) | 75 mA |
| Current - Reverse Leakage @ Vr | 100 nA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 125 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Axial, DO-204AA, DO-7 |
| Reverse Recovery Time (trr) | 4 ns |
| Speed | Any Speed |
| Speed | 200 mA |
| Supplier Device Package | DO-35 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
1N3064
Diode 50 V 75mA Through Hole DO-35
Documents
Technical documentation and resources
No documents available