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2SA1873-GR(TE85L,F

2SA1873-GR(TE85L,F

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Toshiba Semiconductor and Storage

TRANS GP BJT PNP 50V 0.15A 200MW 5-PIN USV T/R

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2SA1873-GR(TE85L,F

2SA1873-GR(TE85L,F

Active
Toshiba Semiconductor and Storage

TRANS GP BJT PNP 50V 0.15A 200MW 5-PIN USV T/R

Find alt

Description

General part information

2SA1873-GR(TE85L,F

TRANS GP BJT PNP 50V 0.15A 200MW 5-PIN USV T/R

Technical Specifications

Parameters and characteristics for this part

Specification2SA1873-GR(TE85L,F
Current - Collector (Ic) (Max)0.15 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)200
Frequency - Transition80 MHz
Mounting TypeSurface Mount
Operating Temperature125 °C
Package / CaseSOT-353, SC-70-5, 5-TSSOP
Package NameUSV
PNP Count2
Power - Max200 mW
Transistor ConfigurationDual, Matched Pair, Common Emitter
Transistor TypePNP
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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