Description
General part information
IDYH40G200C5XKSA1
CoolSiC™ Schottky diode 2000 V, 40 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is the perfect fit for the matching CoolSiC™ MOSFET 2000 V portfolio.
Technical Specifications
Parameters and characteristics for this part
| Specification | IDYH40G200C5XKSA1 |
|---|---|
| Capacitance | 4550 pF |
| Current - Average Rectified (Io) | 114 A |
| Current - Reverse Leakage | 600 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-247-4 Variant |
| Package Name | PG-TO247-U04 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 2000 V |
| Voltage - Forward (Vf) (Max) | 1.75 V |
Pricing
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